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Course Description Course Name : High Speed Semiconductor Devices and Circuits Course Code : EE-650 Course Type : Optional Level of Course : Second Cycle Year of Study : 1 Course Semester : Spring (16 Weeks) ECTS : 6 Name of Lecturer(s) : Asst.Prof.Dr. MUTLU AVCI Learning Outcomes of the Course : designs, characterizes and optimizes the performance of high speed diodes and transistors. extracts the device/material parameters form the experimental data. uses the high speed semiconductor electronic devices in hybrid or monolithic integrated circuits. Mode of Delivery : Face-to-Face Prerequisites and Co-Prerequisites : None Recommended Optional Programme Components : None Aim(s) of Course : To provide the knowledge of modern high-speed semiconductor electronic devices with the ability to design high-speed devices and integrated circuits as well as use these devices in various systems. Course Contents : Negative Differential Resistance effects in Semiconductors and NDR devices, principles of heterojunctions and heterojunction technology, Heterojunction Field-Effect and Bipolar transistors, Ultra high-speed transistors, quantum wells, High-speed Photodetectors. Language of Instruction : English Work Place : Graduate course classroom of Electrical-Electronics Engineering department   Course Outline /Schedule (Weekly) Planned Learning Activities Week Subject Student's Preliminary Work Learning Activities and Teaching Methods 1 Principles of heterojunctions and heterojunction technology Reading corresponding chapters of reference books Lecture 2 Heterojunction Bipolar transistors 1 Reading corresponding chapters of reference books Lecture 3 Heterojunction Bipolar transistors 2 Reading corresponding chapters of reference books Lecture 4 Heterojunction Field-Effect Transistors 1 Reading corresponding chapters of reference books Lecture 5 Heterojunction Field-Effect Transistors 2 Reading corresponding chapters of reference books Lecture 6 Ultra high-speed transistors: ballistic transistors Reading corresponding chapters of reference books Lecture 7 Problem hour Problem solving 8 Midterm exam Classical exam 9 Ultra high-speed transistors: vertical FETs Reading corresponding chapters of reference books Lecture 10 Negative Differential Resistance effects in Semiconductors Reading corresponding chapters of reference books Lecture 11 NDR devices Reading corresponding chapters of reference books Lecture 12 Electronic characteristics of Quantum wells Reading corresponding chapters of reference books Lecture 13 Optical characteristics of Quantum wells Reading corresponding chapters of reference books Lecture 14 High-speed Photodetectors: Avalanche detectors Reading corresponding chapters of reference books Lecture 15 High-speed Photodetectors: Schottky detectors Reading corresponding chapters of reference books Lecture 16/17 High-speed Photodetectors: Metal-Semiconductor-Metal detectors Reading corresponding chapters of reference books Lecture   Required Course Resources Resource Type Resource Name Recommended Course Material(s)  Physics of Semiconductor Devices, by M. Shur, Prentice Hall, 1990, ISBN 0-13- 666496-2.  Semiconductor Optoelectronic Devices, by P. Bhattacharya, 2nd Edition, 1997, Prentice Hall, ISBN 0-13-495656-1.  HighSpeed Heterostructure Devices, P. Roblin and H. Rohdin, Cambridge University Press , 2002.  Modern Semiconductor Device Physics S. M. Sze; John Wiley & Sons, NY-Chichester-Weinheim-BrisbaneSingapore-Toronto, 1998, ISBN: 0-471-15237-4 Required Course Material(s)   Assessment Methods and Assessment Criteria Semester/Year Assessments Number Contribution Percentage     Mid-term Exams (Written, Oral, etc.) 1 80     Homeworks/Projects/Others 1 20 Total 100 Rate of Semester/Year Assessments to Success 40   Final Assessments 100 Rate of Final Assessments to Success 60 Total 100   Contribution of the Course to Key Learning Outcomes # Key Learning Outcome Contribution* 1 Communicates with people in an appropriate language and style. 0 2 Specializes by furthering his knowledge level at least in one of the basic subfields of electiral-electronic engineering. 5 3 Grasps the integrity formed by the topics involved in the field of specialization. 4 4 Grasps and follows the existing literature in the field of specialization. 4 5 Comprehends the interdisciplinary interaction of his field with other fields. 4 6 Has the aptitude to pursue theoretical and experimental work. 4 7 Forms a scientific text by compiling the knowledge obtained from research. 4 8 Works in a programmed manner within the framework set by the advisor on the thesis topic, in accordance with the logical integrity required by this topic. 3 9 Performs a literature search in scientific databases; in particular, to scan the databases in an appropriate manner, to list and categorize the listed items. 1 10 Has English capability at a level adequate to read and understand a scientific text in his field of specialization, written in English. 3 11 Compiles his/her knowledge in his/her field of specialization. in a presentation format, and presents in a clear and effective way. 2 12 Writes a computer code aimed at a specific purpose, in general, and related with his/her field of specialization, in particular 3 13 Pursues research ın new topics based on his/her existing research experıence. 2 14 Gives guidance in environments where problems related with his/her field need to be solved, and takes initiative. 1 15 Develops and evaluates projects, policies and processes in his field of specialization. 3 * Contribution levels are between 0 (not) and 5 (maximum).   Student Workload - ECTS Works Number Time (Hour) Total Workload (Hour) Course Related Works     Class Time (Exam weeks are excluded) 15 3 45     Out of Class Study (Preliminary Work, Practice) 14 4 56 Assesment Related Works     Homeworks, Projects, Others 1 10 10     Mid-term Exams (Written, Oral, etc.) 1 12 12     Final Exam 1 27 27 Total Workload: 150 Total Workload / 25 (h): 6 ECTS Credit: 6